孙金中, 冯炳军. 一种新型指数补偿BICMOS带隙基准源[J]. 微电子学与计算机, 2010, 27(12): 109-112.
引用本文: 孙金中, 冯炳军. 一种新型指数补偿BICMOS带隙基准源[J]. 微电子学与计算机, 2010, 27(12): 109-112.
SUN Jin-zhong, FENG Bing-jun. A Novel Exponential Curvature-Compensated BICMOS Bandgap Reference[J]. Microelectronics & Computer, 2010, 27(12): 109-112.
Citation: SUN Jin-zhong, FENG Bing-jun. A Novel Exponential Curvature-Compensated BICMOS Bandgap Reference[J]. Microelectronics & Computer, 2010, 27(12): 109-112.

一种新型指数补偿BICMOS带隙基准源

A Novel Exponential Curvature-Compensated BICMOS Bandgap Reference

  • 摘要: 在分析了带隙基准的指数曲率补偿原理的基础上, 设计了一个低功耗、低温度系数、高电源抑制比的新型BICMOS带隙基准源电路.该电路基于0.6μm BICMOS工艺进行设计、仿真和实现.仿真结果表明, 该带隙基准源在5V电源电压下, 电源电流为50μA;温度变化范围从-40℃~110℃时, 温度系数为2ppm/℃;低频电源抑制比为-105dB;负载从空载到驱动1k电阻时调整率为0.6mV.

     

    Abstract: A novel exponential curvature-compensated BICMOS (Bipolar Complementary Metel-Oxide-Semiconductor) bandgap reference is proposed;which has a character of low power, low temperature coefficient, high power supply rejection ratio (PSRR) ;basing on analysis of exponential curvature-compensation bandgap reference technique.The reference circuit is designed, simulated and realized by 0.6μm BICMOS process.The simulation results show that the reference has a 50μA supply current;and temperature coefficient (TC) of 2ppm/℃ from-40℃ to 110℃;and-105dB PSSR at low frequency;and 0.6mV load regulation.

     

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