李阳军, 杨艳军, 陈鸣, 张成彬. 一种具有工艺补偿的低功耗CMOS参考电流源[J]. 微电子学与计算机, 2021, 38(2): 62-65.
引用本文: 李阳军, 杨艳军, 陈鸣, 张成彬. 一种具有工艺补偿的低功耗CMOS参考电流源[J]. 微电子学与计算机, 2021, 38(2): 62-65.
LI Yang-jun, YANG Yan-jun, CHEN Ming, ZHANG Cheng-bin. A low power CMOS current reference with process-insensitive temperature compensation[J]. Microelectronics & Computer, 2021, 38(2): 62-65.
Citation: LI Yang-jun, YANG Yan-jun, CHEN Ming, ZHANG Cheng-bin. A low power CMOS current reference with process-insensitive temperature compensation[J]. Microelectronics & Computer, 2021, 38(2): 62-65.

一种具有工艺补偿的低功耗CMOS参考电流源

A low power CMOS current reference with process-insensitive temperature compensation

  • 摘要: 为了减小工艺对电流源温度系数的影响,本文提出了一种CTAT电压产生电路,能够产生温度系数对工艺不敏感的CTAT电压;结合温度系数对工艺不敏感的片上电阻,设计了一种具有工艺补偿的参考电流源.参考电流源电路基于0.18 μm CMOS工艺设计,电源电压为1.8 V,版图面积为100 μm*130 μm.后仿真结果表明,tt工艺角下输出参考电流为32.5 nA,整个参考电流源电路消耗电流162 nA;在-40-125℃温度范围内,tt、ff和ss工艺角下的温度系数分别为39 ppm/℃、45 ppm/℃和35 ppm/℃.

     

    Abstract: In order to reduce the influence of process on temperature coefficient of current reference, a CTAT voltage generation circuit is proposed in this paper, which can generate CTAT voltage with temperature coefficient insensitive to process. Combined with on-chip resistor which has process-independent temperature coefficient, a current reference with process compensation is designed. The proposed current reference is designed based on 0.18 μm CMOS technology with the power supply of 1.8 V, and the layout area is 100 μm*130 μm. Post-simulation results show that the current reference consumes 162nA and the output current is 32.5 nA at tt corner. Within the temperature range of -40~125℃, the temperature coefficients at tt, ff and ss corner are 39 ppm/℃, 45 ppm/℃ and 35 ppm/℃, respectively.

     

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