孙健, 陈岚, 郝晓冉. 基于PCRAM主存系统的访问机制[J]. 微电子学与计算机, 2014, 31(1): 99-102.
引用本文: 孙健, 陈岚, 郝晓冉. 基于PCRAM主存系统的访问机制[J]. 微电子学与计算机, 2014, 31(1): 99-102.
SUN Jian, CHEN Lan, HAO Xiao-ran. An Access Scheme for PCRAM-Based Main Memory System[J]. Microelectronics & Computer, 2014, 31(1): 99-102.
Citation: SUN Jian, CHEN Lan, HAO Xiao-ran. An Access Scheme for PCRAM-Based Main Memory System[J]. Microelectronics & Computer, 2014, 31(1): 99-102.

基于PCRAM主存系统的访问机制

An Access Scheme for PCRAM-Based Main Memory System

  • 摘要: 随着基于DRAM主存系统功耗的不断上升,相变随机访问存储器(PCRAM)凭借其高密度、低功耗、非易失等优点,将成为下一代最有潜力的主存技术.然而,PCRAM的写操作具有寿命有限和写入能耗、延时较大的特点,限制了其在主存系统中的应用.为了延长主存系统的使用寿命并减少写入能耗,采用写前读技术设计了一种基于异或的数据并行机制.实验结果表明,经过该机制处理,与传统的Data Comparison Write和Flip-N-Write机制相比,写寿命分别延长38%和19%,写入能耗分别减少28%和17%.

     

    Abstract: As the energy consumption grows in memory system,Phase Change Random Access Memory (PCRAM) is the most promising candidate to be the alternative of DRAM-based main memory.It appears to great advantages of high scalability,low power consumption and non-volatile.However,the limitation of PCRAM used as main memory is the characteristics of write operation,such as poor endurance,high write energy consumption and high write access latency.This paper proposes a parallel read-before-write XOR-based scheme to improve life time and reduce energy consumption of PCRAM.Comparing with Data Comparison Write and Flip-N-Write scheme,experimental results show that our solution improves the write endurance up to 38% and 19%,reduce the write energy consumption by 28% and 17% on average respectively.

     

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