殷树娟. 基于GPM的PVT电路快速仿真方法[J]. 微电子学与计算机, 2017, 34(12): 16-18, 24.
引用本文: 殷树娟. 基于GPM的PVT电路快速仿真方法[J]. 微电子学与计算机, 2017, 34(12): 16-18, 24.
YIN Shu-juan. A New Fast PVT Simulation Method Based on GPM[J]. Microelectronics & Computer, 2017, 34(12): 16-18, 24.
Citation: YIN Shu-juan. A New Fast PVT Simulation Method Based on GPM[J]. Microelectronics & Computer, 2017, 34(12): 16-18, 24.

基于GPM的PVT电路快速仿真方法

A New Fast PVT Simulation Method Based on GPM

  • 摘要: 本文针对45 nm及以下工艺节点中工艺角数目不断增多的情况, 利用高斯过程模型GPM的贝叶斯回归方法实现了一种基于GPM的PVT电路快速仿真方法.该方法通过定义一组具有不同概率的备选函数族, 在自适应算法下通过尽可能少的仿真次数优化输出变量的不确定度, 快速找出电路设计的最坏情况, 直至满足设计要求, 从而解决了传统的多项式拟合建立PVT解析模型方法的精度问题, 能够在保证仿真精度的同时缩短仿真时间, 提高电路设计效率.

     

    Abstract: Gauss process model GPM has a rigorous statistical theoretical basis for dealing with Gao Weishu, small samples, nonlinear and other complex problems with good adaptability. With the increasing increment in technology of integrated circuits, the 45nm and the following process node have more and more process-voltage-temperature cases. A new PVT circuit fast simulation method is given in this paper using the Gauss process mode. The method by defining a set of alternatives with different probability functions can quickly find out the worst case circuit design to meet the design requirements. Then it can not only solve the problem of polynomial fitting accuracy of the traditional PVT analytical model method but also guarantee the simulation accuracy and shorten the simulation time and improve the efficiency of circuit design.

     

/

返回文章
返回