孙铭阳, 郑晓, 郭桂良. 一种EFlash高压自校准电路[J]. 微电子学与计算机, 2019, 36(11): 1-6.
引用本文: 孙铭阳, 郑晓, 郭桂良. 一种EFlash高压自校准电路[J]. 微电子学与计算机, 2019, 36(11): 1-6.
SUN Ming-yang, ZHENG Xiao, GUO Gui-liang. An EFlash high voltage auto trim circuit[J]. Microelectronics & Computer, 2019, 36(11): 1-6.
Citation: SUN Ming-yang, ZHENG Xiao, GUO Gui-liang. An EFlash high voltage auto trim circuit[J]. Microelectronics & Computer, 2019, 36(11): 1-6.

一种EFlash高压自校准电路

An EFlash high voltage auto trim circuit

  • 摘要: 嵌入式闪存(Embedded Flash, EFlash)内部高压的准确性对其读取、编程和擦除的有效性至关重要.为了EFlash IP的高压误差尽可能小, 电路预留了可调接口用于调整内部高压的数值.通过提出自动检测的算法和设计集自动化检测和校准一体的自测电路, 达到快速校准高压的目的.实验以一个2 M存储容量的EFlash为对象, 实现校准时间从3 s到30 ms的减少.

     

    Abstract: The accuracy of Embedded Flash (E; Flash) internal high voltage is crucial to its efficiency of reading, programming and erasing. In order to minimize the high voltage error of EFlash IP, the circuit reserved adjustable interface to adjust the value of internal high voltage. By putting forward the algorithm of automatic detection and designing the self-test circuit integrating automatic detection and calibration, the purpose of high voltage calibration can be achieved quickly. The experiment takes EFlash with a storage capacity of 2 M as the object to reduce the calibration time from 3 s to 30 ms.

     

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