一种应用于物联网的双频段射频D类功放的设计

A Dual-Band Class-D CMOS Power Amplifier for IoT Applications

摘要: 基于0.18μm CM OS工艺，设计了一个适用于物联网系统的双频段（400 M Hz/600 M Hz）射频D类功率放大器.电路采用了一种没有开关的双频段阻抗匹配网络来解决功放多频化的问题，并进行了理论分析及设计.测试结果表明，采用2 V电源供电，电路在400 M Hz/600 M Hz两个频段上的输出功率分别为14 dBm/15.4 dBm，功率增益分别为17.4 dB/16.8 dB，功率附加效率分别为35%/34%.

Abstract: In this paper,a dual-band Class-D CMOS power amplifier (PA) in a standard 0.18 μm CMOS process is presented for Internet of Things (IoT) applications.The paper describes the specific method of matching network at the dual-band (400 M Hz/600 M Hz) and the circuit operates at 2V supply voltage.Measurement results indicated that the proposed amplifier provides 17.4 dB/16.8 dB gain,14 dBm/15.4 dBm output power and the measured maximum efficiencies of the dual-band PA are 35%/34% at the 400/600 M Hz bands,respectively.