张晓波, 许东升, 戴澜, 蔡小五, 彭锐, 汤红菊. 一种高性能ESD电源钳位电路设计[J]. 微电子学与计算机, 2019, 36(11): 65-69.
引用本文: 张晓波, 许东升, 戴澜, 蔡小五, 彭锐, 汤红菊. 一种高性能ESD电源钳位电路设计[J]. 微电子学与计算机, 2019, 36(11): 65-69.
ZHANG Xiao-bo, XU Dong-sheng, DAI Lan, CAI Xiao-wu, PENG Rui, TANG Hong-ju. Design of a high performance ESD power clamp circuit[J]. Microelectronics & Computer, 2019, 36(11): 65-69.
Citation: ZHANG Xiao-bo, XU Dong-sheng, DAI Lan, CAI Xiao-wu, PENG Rui, TANG Hong-ju. Design of a high performance ESD power clamp circuit[J]. Microelectronics & Computer, 2019, 36(11): 65-69.

一种高性能ESD电源钳位电路设计

Design of a high performance ESD power clamp circuit

  • 摘要: 本文提出了一种新型的ESD电源钳位电路, 该电路采用反馈结构延长了电路在ESD事件来临时的开启时间, 并且增强了电路的鲁棒性, 避免电路在正常供电过程中发生误触发现象.和传统结构相比, 检测电路中电容只有20 fF, 节省了版图面积.仿真结果表明, ESD来临时, BIGFET开启时间能达1 μs, 在5V/1μs高速电源电压上电时, BIGFET未发生误开启, 因此本文设计的ESD电源钳位电路可以被广泛应用在各种高速电路中.

     

    Abstract: A novel ESD power clamp circuit is proposed in this paper. A feedback structure is used to extend turn-on time of the circuit under ESD event, and enhance the robustness of the circuit to avoid false triggering during normal power supply. Compared with the traditional structure, the capacitance in the detection circuit is only 20fF, which saves the layout area. The simulation results show that the turn-on time of BIGFET can reach 1μs when ESD is coming. When the 5V/1μs high-speed power supply voltage is powered on, the BIGFET does not turn on accidentally. Therefore, the ESD power clamp circuit designed in this paper can be widely used in various high-speed circuits.

     

/

返回文章
返回