叶亚东, 吴秀龙, 蔺智挺. 一种优化低电压SRAM灵敏放大器时序的4T双复制位线延迟技术[J]. 微电子学与计算机, 2015, 32(3): 28-30,35.
引用本文: 叶亚东, 吴秀龙, 蔺智挺. 一种优化低电压SRAM灵敏放大器时序的4T双复制位线延迟技术[J]. 微电子学与计算机, 2015, 32(3): 28-30,35.
YE Ya-dong, WU Xiu-long, LIN Zhi-ting. A 4T Dual Replica-Bitline Delay Technique Forprocess- Variation-Tolerant Low Voltage SRAM Sense Amplifier Timing[J]. Microelectronics & Computer, 2015, 32(3): 28-30,35.
Citation: YE Ya-dong, WU Xiu-long, LIN Zhi-ting. A 4T Dual Replica-Bitline Delay Technique Forprocess- Variation-Tolerant Low Voltage SRAM Sense Amplifier Timing[J]. Microelectronics & Computer, 2015, 32(3): 28-30,35.

一种优化低电压SRAM灵敏放大器时序的4T双复制位线延迟技术

A 4T Dual Replica-Bitline Delay Technique Forprocess- Variation-Tolerant Low Voltage SRAM Sense Amplifier Timing

  • 摘要: 提出一种减少SRAM存取时间的4T双复制位线延迟技术.该技术主要降低灵敏放大器使能信号的时序变化.该设计通过增加另外一根复制位线并提出一种新的4T复制单元,以优化低电压SRAM灵敏放大器的时序.TSMC 65 nm工艺仿真结果表明,在0.6 V电源电压下,与传统复制位线设计相比,该技术的灵敏放大器使能信号时序的标准偏差降低30.8%,其读周期减少12.3%.除此之外,由于4T复制单元的MOS管数与传统复制单元相比降低1/3,减小了整体面积开销.

     

    Abstract: A 4T dual replica-bitline delay technique for reducing access time by suppressing enable timing variation of a sense amplifier was developed. This strategy suppresses the timing variation by adding one another replica-bitline and introducing a novel 4T replica cell which has 4 MOS transistors. At the supply voltage of 0.6V, the simulation results show that the standard deviation of the SA-enable timing and cycle time with the proposed technique is 30.8% and 12.3% smaller than that with a conventional RBL technique in Taiwan Semiconductor Manufacturing Company 65-nm CMOS technology respectively. Moreover, for the MOS number of 4T replica cell is 1/3 smaller than conventional replica cell, it will reduce the overall area overhead.

     

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