周志兴, 来强涛, 姜宇, 郭江飞, 王成龙, 陈腾, 郭桂良. 一种高电源抑制比带隙基准源[J]. 微电子学与计算机, 2019, 36(5): 1-4, 9.
引用本文: 周志兴, 来强涛, 姜宇, 郭江飞, 王成龙, 陈腾, 郭桂良. 一种高电源抑制比带隙基准源[J]. 微电子学与计算机, 2019, 36(5): 1-4, 9.
ZHOU Zhi-xing, LAI Qiang-tao, JIANG Yu, GUO Jiang-fei, WANG Cheng-long, CHEN Teng, GUO Gui-liang. A high PSRR bandgap reference[J]. Microelectronics & Computer, 2019, 36(5): 1-4, 9.
Citation: ZHOU Zhi-xing, LAI Qiang-tao, JIANG Yu, GUO Jiang-fei, WANG Cheng-long, CHEN Teng, GUO Gui-liang. A high PSRR bandgap reference[J]. Microelectronics & Computer, 2019, 36(5): 1-4, 9.

一种高电源抑制比带隙基准源

A high PSRR bandgap reference

  • 摘要: 介绍了一种高电源抑制比的带隙基准电路.本文采用改进的威尔逊电流镜结构和负反馈技术设计了一种新型的稳压电路, 为带隙基准提供电源和偏置, 实现了高电源抑制比.结果表明, 在-40℃~150℃温度范围、3.5 V~6 V的电源电压范围内, 该带隙基准的温度系数为15 ppm/℃.带隙基准源的电源抑制比在直流处和1 kHz处分别为-125 dB、-106 dB.

     

    Abstract: A power supply rejection ratio (PSRR) Bandgap reference was introduced. In order to improve the PSRR, this paper proposed a novel voltage stabilizing circuit based on an improved Wilson current mirror structure and feedback technology, which provides power and bias for bandgap reference. The results show that the bandgap reference featured a temperature coefficient of 15 ppm/℃ at a input voltage range from 3.5 V to 6V, a PSRR of -125 dB, -106 dB at direct-current, 1 kHz respectively.

     

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