夏晓娟, 张洪俞, 顾巍. 基于LED驱动芯片的低温漂CMOS基准电压源[J]. 微电子学与计算机, 2012, 29(5): 138-142.
引用本文: 夏晓娟, 张洪俞, 顾巍. 基于LED驱动芯片的低温漂CMOS基准电压源[J]. 微电子学与计算机, 2012, 29(5): 138-142.
XIA Xiao-juan, ZHANG Hong-yu, GU Wei. Low-temperature-drift CMOS Voltage Reference Used in LED Driver[J]. Microelectronics & Computer, 2012, 29(5): 138-142.
Citation: XIA Xiao-juan, ZHANG Hong-yu, GU Wei. Low-temperature-drift CMOS Voltage Reference Used in LED Driver[J]. Microelectronics & Computer, 2012, 29(5): 138-142.

基于LED驱动芯片的低温漂CMOS基准电压源

Low-temperature-drift CMOS Voltage Reference Used in LED Driver

  • 摘要: 设计了一种低温漂CMOS基准电压源, 应用于LED驱动芯片中.采用基本的带隙基准电压源原理, 并对结构进行了改进, 减小了失调电压对输出的影响, 同时可以提供多路输出, 满足LED驱动芯片中多个基准电压的需求.基于CSMC 0.5μm CMOS工艺对所设计电路进行了模拟仿真.常温 (25℃) 下, 电源电压为4V时电路具有稳定的三路输出:200mV、600mV和1V, 温度在-45~85℃变化时, 温度系数为16.9ppm/℃, PSRR大于-70dB@1 kHz.

     

    Abstract: A low temperature drift CMOS voltage reference used in LED driver is designed.The principle of bandgap voltage reference is used in the proposed circuit.The structure is also improved to decrease the effect of offset voltage.Multi-output is also obtained to face the demand of LED driver chip.The proposed circuit is designed and simulated in CSMC 0.5 μm CMOS process.Three stable output voltage is get with 4 V VDD and they are 200 mV, 600 mV and 1 V.The temperature coefficient is 16.9 ppm/℃ when the temperature is changed between-45 ℃ and 85 ℃.The PSRR is greater than-70 dB at 1 kHz.

     

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