刘军, 李进, 王伟, 任福继. 基于相邻多层冗余共享的三维存储器堆叠方法[J]. 微电子学与计算机, 2017, 34(7): 1-6.
引用本文: 刘军, 李进, 王伟, 任福继. 基于相邻多层冗余共享的三维存储器堆叠方法[J]. 微电子学与计算机, 2017, 34(7): 1-6.
LIU Jun, LI Jin, WANG Wei, REN Fu-ji. A Stacking Scheme Using Adjacent Redundancy Across Dies for 3D-stacked Memory[J]. Microelectronics & Computer, 2017, 34(7): 1-6.
Citation: LIU Jun, LI Jin, WANG Wei, REN Fu-ji. A Stacking Scheme Using Adjacent Redundancy Across Dies for 3D-stacked Memory[J]. Microelectronics & Computer, 2017, 34(7): 1-6.

基于相邻多层冗余共享的三维存储器堆叠方法

A Stacking Scheme Using Adjacent Redundancy Across Dies for 3D-stacked Memory

  • 摘要: 为提高三维存储器的成品率和减少冗余行列所需的TSVs的数量, 提出每一层存储块都与相邻上下两层共享冗余的三维存储器冗余共享结构, 并给出了一种新的堆叠方案, 将故障较多与较少的芯片交替堆叠.实验结果表明, 该结构在有效控制TSVs数量增长的前提下, 提高了三维存储器的修复率.

     

    Abstract: To improve the yield and the number of TSVs used in spare rows and columns, this paper proposed a sharing structure of adjacent redundancy across dies. Besides, based on the new redundancy sharing structure, a die-selection method stacking alternative memory layers with different number of faults was also presented. Experimental results show that the proposed method can significantly increase memory yield with relatively small area overhead of TSVs.

     

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