贺威, 张正选. 部分耗尽PD CMOS/SOI器件SEU模型分析[J]. 微电子学与计算机, 2010, 27(12): 138-141.
引用本文: 贺威, 张正选. 部分耗尽PD CMOS/SOI器件SEU模型分析[J]. 微电子学与计算机, 2010, 27(12): 138-141.
shu
HE Wei, ZHANG Zheng-xuan. Analyses of SEU Model for PD CMOS/SOI[J]. Microelectronics & Computer, 2010, 27(12): 138-141.
Citation: HE Wei, ZHANG Zheng-xuan. Analyses of SEU Model for PD CMOS/SOI[J]. Microelectronics & Computer, 2010, 27(12): 138-141.
shu

部分耗尽PD CMOS/SOI器件SEU模型分析

Analyses of SEU Model for PD CMOS/SOI

    摘要
  • 摘要: 通过计算机模拟分析CMOS/SOI器件中单粒子效应的影响, 采用二维模拟软件MEDICE, 建立了器件发生单粒子效应时内部电荷的分布模型.利用电荷分布模型建立了CMOS/SOI器件在入射不同LET值时的离子与器件中瞬态电流的关系曲线;并建立了离子入射点的不同位置与瞬态电流的关系曲线.从理论上提供了一种分析器件SEU的手段.

     

    Abstract: We have investigated the mechanisms of single event effect for CMOS/SOI device and the charge distribution induced by ions strike has been analyzed using a 2D finite element simulation.A model for SEU induced leakage in CMOS/SOI transistors is presented.MEDICI was used to discuss the SEU caused by all kinds of the ions strike.The results of simulation are consistent with the model of charging funnel.

     

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