姜树法, 张国俊. 分段温度曲率补偿双极工艺带隙基准设计[J]. 微电子学与计算机, 2013, 30(4): 75-78.
引用本文: 姜树法, 张国俊. 分段温度曲率补偿双极工艺带隙基准设计[J]. 微电子学与计算机, 2013, 30(4): 75-78.
JIANG Shu-fa, ZHANG Guo-jun. Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology[J]. Microelectronics & Computer, 2013, 30(4): 75-78.
Citation: JIANG Shu-fa, ZHANG Guo-jun. Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology[J]. Microelectronics & Computer, 2013, 30(4): 75-78.

分段温度曲率补偿双极工艺带隙基准设计

Design of a Bandgap Reference in Bipolar Process Based on Piecewise Temperature Curvature-Correct Technology

  • 摘要: 介绍一种采用双极工艺适用于低压差线性稳压源的带隙基准设计,基准具有使能电路,有效减小锁定状态下的静态功耗,锁定状态下静态电流为34.419pA.针对低压差线性稳压源的应用环境要求,对基准工作温度范围内进行分段曲率补偿技术以降低其温度漂移.-40℃~140℃温度范围内基准电源的温度系数达到25.7ppm/℃.该基准无运放,以降低运放失调电压的影响,其电源抑制比为-80.33dB.电源电压在2.5V~6V变化时,基准大小变化0.3mV.

     

    Abstract: This paper presents a bandgap reference in bipolar process which is used in Low - dropout linear regulator.The reference has an enable circuit to reduce the power consumption in shutdown mode.When the circuit is shutdown,the current to ground is 34.419pA.Considering the Low-dropout linear regulator's application environment,a piecewise curvature - corrected technology is used for reducing the voltage drift when the chip temperature is high.The PPM of this circuit is 25.7/ C when the temperature is switch form -40℃to 140℃.The reference is designed without any operational amplifier to reduce the impact of the Op-Amp's offset voltage and the PSRR of this bandgap reference is -80.33dB.The reference skews 0.3mV under the supply voltage ranging from 2.5V to 6V.

     

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