胡仕刚, 吴笑峰, 席在芳. 超薄栅氧MOS器件传统关态栅泄漏电流研究[J]. 微电子学与计算机, 2011, 28(12): 133-136.
引用本文: 胡仕刚, 吴笑峰, 席在芳. 超薄栅氧MOS器件传统关态栅泄漏电流研究[J]. 微电子学与计算机, 2011, 28(12): 133-136.
shu
HU Shi-gang, WU Xiao-feng, XI Zai-fang. Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state[J]. Microelectronics & Computer, 2011, 28(12): 133-136.
Citation: HU Shi-gang, WU Xiao-feng, XI Zai-fang. Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state[J]. Microelectronics & Computer, 2011, 28(12): 133-136.
shu

超薄栅氧MOS器件传统关态栅泄漏电流研究

Study on the Gate Leakage Current of Ultra-thin MOS Devices in Conventional Off-state

    摘要
  • 摘要: 理论分析了MOSFET关态泄漏电流产生的物理机制,深入研究了栅氧化层厚度为1.4nm MOSFET传统关态下边缘直接隧穿栅泄漏现象.结果表明:边缘直接隧穿电流服从指数变化规律;传统关态下边缘直接隧穿对长沟道器件的影响大于短沟道器件;衬底反偏在一定程度上减小边缘直接隧穿泄漏电流.

     

    Abstract: The physical mechanism of off-state leakage current is analyzed Abstractly.The edge direct-tunneling (EDT) gate leakage current of MOSFET with 1.4 nm gate oxide biased in conventional off-state is studied in depth.The results showed that the change of the EDT current obeys index law,the EDT makes a greater impact on short-channel devices than that on long-channel device in conventional off-state,and the EDT current is reduced to a certain extent with the substrate biased reversely.

     

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