Abstract: The depletion region modulation effect on the thermally generated leakage current of hydrogenated metal-induced laterally crystallized polycrystalline silicon thin film transistors under the hot-carrier stress has been studied. The depletion region modulation effect on the thermally generated leakage current of the hydrogenated ones under the hot-carrier stress is proved theoretically． At the same time, this effect on the thermally generated leakage current of hydrogenated metal-induced laterally cry stallized polycrystalline silicon thin film transistors is confirmed by the forward and reverse measurement modes in experiments. And it is found that the thermally generated leakage current of the hydrogenated ones all decreases with the stress time evolution in both modes. However, due to the different influence of the hot holes′ injection on the surface potentials of the channel near the drain and source, the decrease of the thermally generated leakage current appears different in the forward and reverse measurement modes under the hot-carrier stress. Understanding the depletion region modulation effect on the thermally generated leakage current of hydrogenated metal-induced laterally crystallized polycrystalline silicon thin film transistors under the hot-carrier stress is helpful for designing circuits.