Abstract: A novel low-power low-voltage reference is developed utilizing △V_GS between sub threshold MOSFETs.It is implemented in HJTC 180 nm standard CMOS process.The proposed voltage reference generates two different V_GSs which have negative temperature coefficients and combines them to produce an output voltage with a nearly zero temperature coefficient.The resulting reference voltage is 220 mV with the temperature coefficient 68×10^-6/℃in the range of-25 ℃ to 100 ℃ The minimum supply voltage is 0.7 V and the simulated line regularity is 1.5 mV/ V with the supply range from 0.7~4 V.The PSRR is-56dB at 1 kHz and the power consumption is 3.7μW under 1.0 V at 300 K.The entire chip core area with the start up circuit is 0.02 mm².This voltage reference is suitable for the low-power low-voltage applications.