唐宁, 李维. 具有温度和工艺补偿的1GHz时钟振荡器的设计[J]. 微电子学与计算机, 2013, 30(8): 165-168.
引用本文: 唐宁, 李维. 具有温度和工艺补偿的1GHz时钟振荡器的设计[J]. 微电子学与计算机, 2013, 30(8): 165-168.
TANG Ning, LI Wei. 1 GHz Clock Oscillator with Process and Temperature Compensation[J]. Microelectronics & Computer, 2013, 30(8): 165-168.
Citation: TANG Ning, LI Wei. 1 GHz Clock Oscillator with Process and Temperature Compensation[J]. Microelectronics & Computer, 2013, 30(8): 165-168.

具有温度和工艺补偿的1GHz时钟振荡器的设计

1 GHz Clock Oscillator with Process and Temperature Compensation

  • 摘要: 为了克服时钟振荡器对温度和工艺的敏感性,基于 SMIC 0.18μm 标准 CMOS 工艺,设计并实现了具有工艺参数漂移和温度系数漂移补偿特性的1 GHz 时钟振荡器电路.采用了温度系数和阈值电压感应模块,使得振荡频率在工艺和温度变化时仍具有较高的稳定性,同时加入整形电路,形成轨对轨的方波时钟信号.经仿真表明,在电源电压1.8V 下,不同工艺角ff,ss,tt,频率的最大偏移为1.43%.工作温度变化范围-40~125℃时,频率的最大偏移为0.87%,达到频率稳定度的要求.

     

    Abstract: In order to overcome the clock oscillator's sensitivity to temperature and process,designing and implementing a 1 GHz clock oscillator circuit with process and temperature compensation based on a SMIC 0.18 μm standard CMOS process.The oscillator uses a temperature compensated block and a threshod voltage sensing block. With these blocks,the frequency still has high stability when process and temperatrue change.In the meantime, adding the shaping circuit to form the rail to rail square wave clock signal.Measurements are made in the supply power of 1.8 V,across the process corners ff,tt,ss,and a temperature range of-40℃ to 125℃,they indicate a worst case variation of 2.08% and 2.3% respectively.Achieving the acquirement of frequency stability.

     

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