Abstract: This paper firstly introduced a new effect,meso-piezoresistive effect,analysed the strain on Al_xGa₁__xAs/GaAl/Al_xGa₁__xAs double-barrier resonant tunneling structure along the axis director; then computed the influence of the barrier width and height from the axial strain,used Matlab as tool simulate the transmission coefficient and tunneling electric current. Finally we find the strain can make the electric current increase linearly,the velocity of increase differ with different voltage. It offers a theory basis for devising resonant tunneling devices.