深亚微米工艺下单粒子瞬态引起的串扰效应
Crosstalk Effects Caused by Single Event Transient in Deep Submicron Technology
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摘要: 随着集成电路工艺的发展,供电电压降低,线条变细,使得集成电路受到普通串扰和粒子辐射的影响更严重.由此对130~40 nm工艺节点普通串扰和单粒子引起的串扰效应进行了对比分析.单粒子引起的串扰比普通串扰更加严重,而且随着工艺进步,单粒子引起的串扰现象将更加恶化.验证了在不同工艺下增加驱动尺寸和增加连线间距对缓解单粒子串扰噪声的有效性.Abstract: As the process technologies scale down,IC is more susceptible to normal crosstalk and particle radiation with the decreasing of supply voltage and line width. Normal crosstalk and SE induced crosstalk are analyzed on 130nm -40 nm technologies.SE induced crosstalk is more serious than normal crosstalk and is becoming more serious with the scaling down of process. Increasing driver size and space are discussed to determine which one is more efficient for decreasing SE induced crosstalk.
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