雷婉, 吴龙盛, 李婷, 时光, 李倩敏. 一种宽电压范围电流基准的设计[J]. 微电子学与计算机, 2020, 37(8): 49-54.
引用本文: 雷婉, 吴龙盛, 李婷, 时光, 李倩敏. 一种宽电压范围电流基准的设计[J]. 微电子学与计算机, 2020, 37(8): 49-54.
LEI Wan, WU Long-sheng, LI Ting, SHI Guang, LI Qian-min. Design of a current reference with wide voltage range[J]. Microelectronics & Computer, 2020, 37(8): 49-54.
Citation: LEI Wan, WU Long-sheng, LI Ting, SHI Guang, LI Qian-min. Design of a current reference with wide voltage range[J]. Microelectronics & Computer, 2020, 37(8): 49-54.

一种宽电压范围电流基准的设计

Design of a current reference with wide voltage range

  • 摘要: 本文针对电流基准功耗大、电源电压范围窄的问题,设计了一款同时具备低功耗、宽电压范围、低温度系数的CMOS基准电流源.基准电流由PTAT电流和CTAT电流按一定比例系数相加产生,表现出与温度无关的特性.使用基于CMOS亚阈值特性的运放和自级联电流镜,扩大了电源电压范围,降低了电路整体功耗,提升了电路性能.电路基于XFAB 0.35 μm CMOS工艺进行设计,结果表明,基准电流为5 μA,在-25℃~125℃温度范围内,温漂系数为40 ppm/℃,电源电压为2.5 V~6 V,功耗为25 μA.

     

    Abstract: With the problem of large power consumption of current reference and narrow supply voltage range, a CMOS reference current source with low power consumption, wide voltage range and low temperature coefficient is proposed.The reference current is generated by adding a certain proportional coefficient between the PTAT and the CTAT current, exhibiting temperature-independent characteristics. Based on CMOS sub-threshold op amps and self-cascading current mirror, it expands the supply voltage range, reduces overall circuit power consumption, and improves circuit performance. The circuit is designed based on the XFAB 0.35 μm CMOS process. The result show that the reference current is 5 μA, the temperature drift coefficient is 40ppm/℃ in the temperature range of -25℃~125℃, the power supply voltage is 2.5 V~6 V, and the power consumption is 25 μA.

     

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