汪飞, 王春华, 何海珍. 一种新型超高频射频识别射频前端电路设计[J]. 微电子学与计算机, 2011, 28(1): 11-15,22.
引用本文: 汪飞, 王春华, 何海珍. 一种新型超高频射频识别射频前端电路设计[J]. 微电子学与计算机, 2011, 28(1): 11-15,22.
WANG Fei, WANG Chun-hua, HE Hai-zhen. A Novel UHF RFID RF Front End Circuits Design[J]. Microelectronics & Computer, 2011, 28(1): 11-15,22.
Citation: WANG Fei, WANG Chun-hua, HE Hai-zhen. A Novel UHF RFID RF Front End Circuits Design[J]. Microelectronics & Computer, 2011, 28(1): 11-15,22.

一种新型超高频射频识别射频前端电路设计

A Novel UHF RFID RF Front End Circuits Design

  • 摘要: 设计了一种低功耗高线性度的新型超高频射频识别射频前端电路.在LNA的设计中,通过在输入端采用二阶交调电流注入结构以提高线性度,在输出端采用开关电容结构以实现工作频率可调;在混频器的设计中,在输入端采用同LNA相同的方法以提高线性度,而在输出端采用动态电流注入结构以降低噪声.该电路采用0.18 μm CMOS工艺,供电电压为1.2 V,仿真结果如下:输入阻抗S11为-23.98 dB,IIP3为5.05 dBm,整个射频前端电路的增益为10 dB.

     

    Abstract: This paper mainly introduced the UHF RFID RF front end circuit design.In the LNA design, it improved the linearity by using the 2nd-intermodulation injection structure at the input terminal, and achieved the operating frequency adjustable by using switch capacitor at the output terminal;in the mixer design, it improved the linearity by the same way as LNA, and eliminated the noise by using dynamic current injection structure at the output terminal.The circuit has been fabricated with a 0.18 μm CMOS process, the supply voltage is 1.2 V, the simulation results show that:the impedance matching S11 is-23.98 dBm, IIP3 is 5.05 dB, and the overall conversion gain of the front end circuit is 10 dB.

     

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