沙亚兵, 李文石. 基于扩展汉明码的BISR设计优化[J]. 微电子学与计算机, 2011, 28(12): 92-95.
引用本文: 沙亚兵, 李文石. 基于扩展汉明码的BISR设计优化[J]. 微电子学与计算机, 2011, 28(12): 92-95.
SHA Ya-bing, LI Wen-shi. BISR Design Optimization Based on Extended Hamming Code[J]. Microelectronics & Computer, 2011, 28(12): 92-95.
Citation: SHA Ya-bing, LI Wen-shi. BISR Design Optimization Based on Extended Hamming Code[J]. Microelectronics & Computer, 2011, 28(12): 92-95.

基于扩展汉明码的BISR设计优化

BISR Design Optimization Based on Extended Hamming Code

  • 摘要: BISR本质是自动实现电路内部纠错.为监督SARM中的176bit宽并行数据,提出一种基于扩展汉明码设计BISR电路的优化技术.将并行数据劈裂为两个模块,分别利用基于扩展汉明码的独立ECC,组建BISR架构.根据异或逻辑的可交换性,重排子运算项,建立XOR-Tree可合并项的特征图,观察与提取可以共用的子运算项,借助这种"兼容"策略优化XOR-Tree,在TSMC 90nm工艺中满足了降低时延和面积的工程要求.仿真结果显示,时延与面积分别降低了约28%和约35%,功耗降低约36%.最终时延为1.5ns,面积为6 200μm2,功耗是0.54mW,表明了本优化方法的有效性.

     

    Abstract: BISR is to achieve the internal nature of the automatic correction function.In order to supervise SRAM's 176-bit wide parallel data,this paper proposed a method to optimize the BISR which based on extended hamming code.The data has been split into two parts suit for ECC architecture.Under the exchangeable logic terms,we built a Signature-map for XOR-Tree.In TSMC 90nm process the results met the project requirements showing reduced 28% of delay,35% of area and 36% of power.At last,ECC delay is 1.5 ns,area,6 200 μm2 and power dissipation,0.54 mW.These data demonstrate the effectiveness of our optimal method.

     

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