Abstract: This paper analyzes the impact of temperature on the interconnect buffer insertion,and proposes an interconnect temperature distribution new model considering the dielectrics,vias,and buffers heat transfer effect. Single and multi-layer interconnect temperature distributions are calculated using 45 nm process parameters based on the new model.The results show that the local interconnect line temperatures are affected a little by buffer heat transfer,while the global interconnect lines are subject to significantly affected and lower 10 degrees Celsius than the dielectric heat transfer model.Moreover,the temperature has a significant effect on buffer insertion locations. Considering the substrate temperature gradient distribution, the location changes more than 10% compared to uniform buffer insertion under 1.5 mm interconnect wire length.