非带隙低功耗低温漂CMOS电压基准电路设计

Design forLow Power Low Temperature Coefficient CMOS Voltage Reference Circuit

摘要: 通过V_th与V_T(热电压)相互补偿原理,提出一种新型非带隙CMOS电压基准源,其输出基准电压具有极低温度系数.采用0.34μm_Foundry18工艺模型和Candance Spectre EDA工具对电路进行模拟验证,获得以下结果:输出电压为552.845mV(T=27℃,V_DD=3.3V),温度系数为1.98ppm/℃(-30℃~+130℃),功耗为21.85μw.电源电压从2.5V变到4.5V,输出电压的变化为0.15%(相对于V_DD=3.3V时的输出).该电压基准源可望应用于高精度、低功耗IC系统的设计研发.

Abstract: This paper presents a pure CMOS voltage circuit with compensation of VT (thermal voltage) and Vth (threshold voltage). Candance Spectre simulation with 0.34μm_Foundry18 process reports TC (temperature coefficient) is 1.98ppm/℃(-30℃DD) sensitivity of 0. 15% (V_DD=2. 5V-4. 5V). The output reference voltage is 552. 845mV (T=27℃,V_DD=3.3V). The dissipation is 21.85μw with V_DD=3.3V.