盛健健, 张国俊. 一种基于BCD工艺的新型5V基准电路设计[J]. 微电子学与计算机, 2013, 30(4): 94-97,102.
引用本文: 盛健健, 张国俊. 一种基于BCD工艺的新型5V基准电路设计[J]. 微电子学与计算机, 2013, 30(4): 94-97,102.
SHENG Jian-jian, ZHANG Guo-jun. Design of a Novel 5V Reference Circuit Based on BCD[J]. Microelectronics & Computer, 2013, 30(4): 94-97,102.
Citation: SHENG Jian-jian, ZHANG Guo-jun. Design of a Novel 5V Reference Circuit Based on BCD[J]. Microelectronics & Computer, 2013, 30(4): 94-97,102.

一种基于BCD工艺的新型5V基准电路设计

Design of a Novel 5V Reference Circuit Based on BCD

  • 摘要: 设计了一种结构简单的新型基准电路,通过对带隙基准的倍乘,无需电压转换电路,输出5V基准电压可直接用于芯片次级电源.电路设计中,运用驱动电路提高基准电压的驱动能力,通过温度补偿、电路隔离技术和反馈环路,提高基准电压的温度特性、电压抑制比和稳定性.全电路基于0.35μm BCD工艺,并通过Hspice仿真.结果表明,基准电压输出为5V,驱动能力20mA,温度系数5.1ppm/℃;室温下,电源抑制比63dB@100kHz.

     

    Abstract: A novel reference circuit with simple structure is presented.In this circuit,the output 5V reference voltage by multiplying the band-gap voltage is used directly as the chip's secondary power supply without voltage conversion circuit.In the circuit design,drive circuit is utilized to enhance the drive capability and temperature characteristics,PSRR,loop stability is improved by temperature compensation,isolation technology and feedback.Resultsfrom simulation with Hspice based on 0.35μm BCD process indicated that the circuit has a output voltage reference of 5V,a drive capability of 20mA,a temperature Coefficient of 5.lppm/℃,a PSRR of 63dB@100kHz at room temperature.

     

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