一种低温度灵敏度片上张弛振荡器
A Low Temperature Sensitivity On-Chip Relaxation Oscillator
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摘要: 本文介绍了一种用CMOS工艺实现的对温度和电源电压变化不敏感的片上张弛振荡器.文中提出了一种降低张弛振荡器频率波动的补偿技术, 该技术克服了传统补偿方法受到片上电阻温度特性制约的缺点, 极大地提高了振荡器输出频率的稳定性.测试结果表明, 当电源电压从1.62 V变化到1.98 V时, 振荡器输出频率变化±0.11%;当温度从40℃变化到125℃时, 输出频率变化±0.24%.相比于传统方法, 频率波动降低了大约2/3.该振荡器采用TSMC 180 nm 1P5M工艺实现, 电源电压为1.8 V.当工作在25 MHz时, 功耗为50 μW.Abstract: A temperature and supply independent on-chip relaxation oscillator is introduced. This paper proposed a technique to reduce frequency variation of relaxation oscillator. This technique overcomes the disadvantages of traditional compensation methods, which are restricted by on-chip resistance temperature characteristics. Experimental results show that the oscillator exhibits frequency variation of ±0.11% for supply ranging from 1.62 V to 1.98 V and ±0.24% for temperature ranging from 40℃ to 125℃. Compared to conventional methods, frequency variation of this oscillator is reduced by 2/3. This oscillator is designed in TSMC 180-nm 1P5M CMOS process with a supply voltage of 1.8 V and consumes 50 μW when operating at 25 MHz.