Abstract: As a popular Non-Volatile Memory technology, Phase-Change Memory (PCM) is considering as the most potential candidate for DRAM due to its comparable read latency with DRAM,high capacity and low idle power. But hybrid memory architecture which consists of both PCM and DRAM is suggested due to asymmetric read-write and limited endurance of PCM device.In this paper,we propose an efficient management with hotspots controlling to reduce power consumption and improve PCM lifetime for PCM-DRAM flat hybrid main memory system to avoid the dense read or write access to memory hotspots caused by locality.