A Micro-Power LDO with Reverse-Voltage Protection

In the paper,a Micro-Power LDO with Reverse-Voltage Protection is presented.For the one hand,utilizing a new Self-Adaptive Gate/Bulk Biasing technique,the gate and bulk voltages of the pass transistor can track the output in the case of reverse voltage,which make the channel pinched and the parasitic drain-to-bulk diode zero biased.Therefore,the issues on the reverse channel current and Latch-Up under reverse voltage are dealt with.On the other hand,using the high efficiency bipolar buffering and zero-pole offsetting synchronously in the loop,not only the LDO stability is ensured but also the dropout voltage is minimized.The proposed LDO is fabricated in the BiCMOS process.The testing results show that the reverse voltage can reach 9V,the load and line regulation are 0.25 mV/mA and 0.6mV/V respectively,the dropout voltage on full load(250mA) is only 70 mV.In addition,the quiescent currents at no load and full load are only 7μA and 7.7μA respectively.