MEI Qi, LONG yan, LIU Zhi, YAO Si-yuan, GE mei, LIU Wen-ping. A technique for improving the transient response of high current LDO[J]. Microelectronics & Computer, 2020, 37(10): 64-68.
Citation: MEI Qi, LONG yan, LIU Zhi, YAO Si-yuan, GE mei, LIU Wen-ping. A technique for improving the transient response of high current LDO[J]. Microelectronics & Computer, 2020, 37(10): 64-68.

A technique for improving the transient response of high current LDO

  • A technique is proposed to improve the transient response of high outputcurrent low-voltage regulator (LDO).This techniqueuses a novel dual feedback loop which achieves the bandwidthextensionandaslew-rateenhancement circuit whichenhancestheslew-rateatthegateofthepowertransistor and anoutput current discharge circuitwhich boosts the recovery speed ofthe outputafter the undershoot of the load current.Designed and fabricated with 0.6μm BiCMOS process.The results show that the output voltage undershoot is only 30.8mV and overshoot is only 20.7mV under the condition of a load mutation of 1mA to 5A when the slope is 1.25A/μs.
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