LI Qing, ZHOU Jian-jun. A High-Efficiency Low-Ripple Charge Pump without Threshold Loss[J]. Microelectronics & Computer, 2015, 32(4): 86-89,93.
Citation: LI Qing, ZHOU Jian-jun. A High-Efficiency Low-Ripple Charge Pump without Threshold Loss[J]. Microelectronics & Computer, 2015, 32(4): 86-89,93.

A High-Efficiency Low-Ripple Charge Pump without Threshold Loss

  • In this paper, a new all-PMOS four-phase charge pump is proposed. Cross-coupled output stage eliminates the threshold loss and reduees the output ripple. The grids of supplementary crystals adopt the dynamic gate bias from complementary branch node,and new clock scheme,and with dynamic gate bias from complementary branch node and new clock scheme, auxiliary capacitance avoids charging and discharging in each cycle's deadtime, which improves output efficiency. Simulation result in TSMC 0.18 μm process has been given out in the end.
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