Design of a Wideband Low Noise Amplifierat 5 GHz Band

A low noise amplifier(LNA)for WLAN 802.11a/axstandard and 5th-Generation applicationscovering 5 to 6 GHz was designed based on IBM 0.18 μm SiGeBiCMOS process. The circuit adopted a two-stage and common emitter topology, the first stage used inductor feedback and the second stage used voltage shunt feedback which improvednoise figure and linearity. The proposed LNA had an input reflection coefficient and output reflection coefficient of -14.6 dB and -12.8 dB respectively from 5 to 6 GHz, the gain is 10.4 dB, and the noise figure is less than 2.7 dB. The proposed LNA consumed 15mW power at 2.5 V DC supply.