YIN Shu-juan. A New Fast PVT Simulation Method Based on GPM[J]. Microelectronics & Computer, 2017, 34(12): 16-18, 24.
Citation: YIN Shu-juan. A New Fast PVT Simulation Method Based on GPM[J]. Microelectronics & Computer, 2017, 34(12): 16-18, 24.

A New Fast PVT Simulation Method Based on GPM

  • Gauss process model GPM has a rigorous statistical theoretical basis for dealing with Gao Weishu, small samples, nonlinear and other complex problems with good adaptability. With the increasing increment in technology of integrated circuits, the 45nm and the following process node have more and more process-voltage-temperature cases. A new PVT circuit fast simulation method is given in this paper using the Gauss process mode. The method by defining a set of alternatives with different probability functions can quickly find out the worst case circuit design to meet the design requirements. Then it can not only solve the problem of polynomial fitting accuracy of the traditional PVT analytical model method but also guarantee the simulation accuracy and shorten the simulation time and improve the efficiency of circuit design.
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