JI Shu-jiang, HUO Zhang-xing, SUN Hai-tao, LIU Jing, LIU Ming. A Low-Power and High-Percision Bandgap Reference Voltage Based on SMIC-28nm Process[J]. Microelectronics & Computer, 2017, 34(9): 71-76.
Citation: JI Shu-jiang, HUO Zhang-xing, SUN Hai-tao, LIU Jing, LIU Ming. A Low-Power and High-Percision Bandgap Reference Voltage Based on SMIC-28nm Process[J]. Microelectronics & Computer, 2017, 34(9): 71-76.

A Low-Power and High-Percision Bandgap Reference Voltage Based on SMIC-28nm Process

  • Based on SMIC 28 nm, a low-power and high-percision bandgap reference voltage for Flash memory is presented in the paper.Cascode is used to improve the percision of the bias current and PSRR.In this circuit design process, all process corner, the rage of temperature is -40~125℃ and power floats±10% has been simulated.With three hundreds Monte Carlo, the mean of output voltage is 1.196 42 V and standard deviation is 5.011 mv, the coefficient is 7 ppm/℃, the total current is 260 nA and When the power is 1.8 V the worse case is 343 nA and the PSRR is -78 dB at 1kHz.A new startup circuit is presented, with the introduction of Schmitt Trigger and tipbranch, the bandgap shows better stability.The area of layout is 105 μm×110 μm2.
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