DAI Yun, ZHANG Guo-jun. A Design of High Performance Voltage Reference Based on Subthreshold[J]. Microelectronics & Computer, 2013, 30(5): 108-111,116.
Citation: DAI Yun, ZHANG Guo-jun. A Design of High Performance Voltage Reference Based on Subthreshold[J]. Microelectronics & Computer, 2013, 30(5): 108-111,116.

A Design of High Performance Voltage Reference Based on Subthreshold

  • A voltage reference based on subthreshold is presented in this paper. The MOSFET working in linear region, instead of the traditional resistance, is used to eliminate the mobility and current temperature impact. In this way, the range of temp is broadened and performance is improved. The circuit is simulated with 0. 5μm CMOS model and the result shows that the circuit can work ranging from 2. 5 to 8V and its line regulation is 0. 3mV/V. Under 3.3V operating voltage, the output reference tempcoefficient in -55℃ to 150℃ is 7. 3ppm/℃,and its static power is 13.8μW, power supply rejection ration is -53dB at 1kHz. The design of reference meets the requirements of a wide temperature range, low temprature drift, low power and high power supply rejection ration.
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