A DC-6 GHz GaAs PHEMT Wideband Low Insertion Loss SPDT RF Switch

This paper presents a wideband low insertion loss single pole double throw switch using Win 0.5 μm GaAs PHEMT process. This switch adopts traditional series-shunt configuration, and take advantage of bonding wire inductor to improve the performance of the switch. Then analyze the relationship between the power capacity and the bias point. With proper bias point, the power capacity of the switch can be enhanced. The designed switch shows good measured performance: in the DC-6 GHz frequency range, the insertion loss is less than 0.55 dB, the isolation is better than 24 dB. when the switch is biased under -7.5 V/7.5 V condition, the input 1 dB compression point is 34 dBm. The designed switch may be used under 6 GHz application. The concept of taking advantage of bonding wire to enhance the performance of the switch may be applied to switch and package design.