Study on the Memory Cell TID/SEL Hardening by Design Technology Area Cost

In space radiation environment, total ionizing dose (TID) effect and single event latch (SEL) have serious impact on the reliability of memory devices. Total Ionizing Dose effect and Single Event Latch and radiation hardening technologies were discussed, especially the Radiation Harden by Design hardening technologies. Four types of new TID/SEL tolerable memory cells are designed to compare the area cost with the available designs. The results show TID/SEL tolerable memory cell design generally increases the cell area by 87.5% at least. One of the proposed programs could make a good trade-off between the hardening performance and the area cost.