Radiation-Hardened SRAM for Dynamic Voltage Frequency Systems

Dynamic Voltage Frequency Scaling is a method which can not only provide good performance for the system, but also can decrease power consumption. It requires that circuit is able to work in a wide range of supply voltage. However, The design of radiation-hardened SRAM for dynamic voltage frequency systems has faced stability problem because of the process, voltage temperature difference. To cope with these questions, Radiation-Hardened SRAM for dynamic voltage system has been designed. A new DICE cell is proposed for low supply power condition, which has better performance in read static noise margin than the regular DICE cell. In addition, proposed Improved Dummy column has increased the stability of SRAM under various PVT conditions. Post simulation results show that the SRAM circuit can work functionally when the supply voltage changes from 0.6 V to 1.8 V. When the supply voltages are 1.8 V and 0.6 V, the access time of SRAM are 5.1 ns and 93.5 ns, respectively. The power consumption is 1.8 mW and 14.63 μW, respectively. The designed SRAM has good immunity for SEU and could filter the SET pulses with width of 300ps.