A Stacking Scheme Using Adjacent Redundancy Across Dies for 3D-stacked Memory

To improve the yield and the number of TSVs used in spare rows and columns, this paper proposed a sharing structure of adjacent redundancy across dies. Besides, based on the new redundancy sharing structure, a die-selection method stacking alternative memory layers with different number of faults was also presented. Experimental results show that the proposed method can significantly increase memory yield with relatively small area overhead of TSVs.