A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process

A Ka band AB class power amplifier (PA) is designed based on 0.15μm GaAs pHEMT process. The layout of via capacitor in matching network is proposed and applied into the design of power combiner of output stage. This improvement reduced the insertion loss of power combiner of 0.8~3dB and proposed the power combining efficiency. The test results show that, within the working frequency from 33 to 37GHz, the PA realizes a small signal gain of 31±1dB, saturated output power of more than 31.18dBm and PAE of more than 21.7%.