Design of Tow Stage SiGe BiCMOS RF Power Amplifier for 4G Applications

A 2-stage cascode structure power amplifier(PA) with SiGe BiCMOS technology is proposed.The first stage is a differential common-source amplifier, which is used to amplify the signal from the input matching, meanwhile, it can suppress noise. And the second stage is a BiFET cascade amplifier which is used as main power amplifier to improve the linearity. The proposed PA is designed with Jazz's 0.18 μm SiGe BiCMOS technology, The simulation results with Spectre RF show that the PA achieved a Gain of 32 dB, a P1dB of 29 dBm. Within the operating frequency rage of 2.3~2.7 GHz, the PA has an S11 and S22 below -10 dB, and the peak PAE is 22.1%.