Design and Optimization of 600V High Voltage Super-Junction VDMOS

Based on the charge compensation principle, the super junction VDMOS (Super-Junction VDMOS, SJVDMOS) device has lower specific on-resistance and higher breakdown voltage than the traditional VDMOS. This paper introduces the super junction VDMOS cell design steps in detail. The TCAD is used to simulate the breakdown voltage and the specific on-resistance of super-junction VDMOS. The effects of charge imbalance, drift zone thickness, substrate back diffusion and surface structure on the breakdown voltage and specific on-resistance are investigated. The optimization of cell structure improves the performance of the super junction VDMOS obviously. The initial breakdown voltage improves from 587V to 662.5V, and the specific on-resistance declines from 7.27 mΩ·cm² to 6.85 mΩ·cm².