On-state Resistance of MTM Amorphous Silicon Antifuse

The structure of MTM(metal-to-metal)amorphous silicon antifuse which has been extensively used in FPGA and PROM product is introduced.On-state resistances which determine the delay of FPGA and PROM have been measured, and the fact that the on-state resistance is inversely proportional to the programming current has been present.The electro thermal model used to predict programmed resistance of TiN/α-Si/TiN MTM antifuse was derived, and the characteristic voltage of MTM antifuse was measured.The experimental results show that the experimental fitting value is in accordance with the theoretical value, and their on-state resistance can be controlled by choosing aprogramming current level.