Modeling of the Threshold Voltage for OISD MOSFET and its Structure Design

A semi-SOI MOSFET produced by drain/source oxygen implantation can suppress self-heating effect and improve breakdown voltage. However owing to the complicated 2-D electric field distribution, the threshold voltage, the sub-threshold slope and the SCEs (short channel effects) of OISD MOSFET are modulated by the size of the silicon window. A compact threshold voltage model based on 2-D numerical simulation was provided for OISD MOST design. At last the threshold voltage model was verified and several other important electrical parameters, including sub-threshold slope, DIBL factor and SCEs, were analyzed in details with the help of MEDICI 2D simulator.