The Design of Linear RF Power Amplifier Based on SiGe Process

A linear RF power amplifier based on SiGe Heterojunction Bipolar Transistors (HBT) is introduced in this paper. The 3-stage power amplifier is biased by self-adaptive bias in each stage. The inter-match networks are integrated in the chip and the bonding wires are used as the inductors in the inter-match networks.The power amplifier works at 2GHz, the band width of the power amplifier is 50MHz,gain is 30dB,the output power at 1dB compression point is 27.1dBm,the power added efficiency is 36% at 1dB compression point. The supply power of the power amplifier is 3.4V,the chip size is 1mm×0.7mm.