Application of Inverse Narrow Width Effect in VLSI at 40 nm Process

INWE (Inverse narrow width effect) is a distinctive layout effect in nanometer scale,which will decrease the threshold voltage with the decreasing of the OD (Definition of diffusion area) width,finally,it will affect the speed with the increasing of Idsat (saturate current).The key point of this paper is the application of INWE in VLSI design.Not only tell the reason of INWE in this paper,but also it re-designs the standard cell library taking the INWE into account.All the design of this paper is based on the TSMC N40LP12T standard cell library,the paper changes the structure of some circuits and re-plan the layout design.And it gains performance increase more than 5% at the cost of lower than 2% power consumption,which all occurs in the same area of the layout occupation.The better PPA (Power Performance Area) is all based on the INWE in the standard library design.