A Class-F RF Power Amplifier with lmproved LC Matching Circuit

To overcome the shortcoming of non-zero 2nd resistance of traditional output matching circuitry in class-F power amplifier, an improved output matching circuitry is proposed to increase the power-added efficiency.A novel input matching circuitry is also proposed to fit the bipolar transistor's characteristic, and farther enhance the efficiency.Simulation on Jazz SiGe 0.35um BiCMOS HBT process shows remarkably improved power-added efficiency from 63% to 73%.The novel 2.4GHz class-F PA is very suitable in nonlinear-modulated RF transmitter.