LIU Hui-hua, LI Ping, XU Xiao-liang, ZHANG Xian. Research on A Single-Event-Hardened Charge Pump[J]. Microelectronics & Computer, 2017, 34(6): 14-17.
Citation: LIU Hui-hua, LI Ping, XU Xiao-liang, ZHANG Xian. Research on A Single-Event-Hardened Charge Pump[J]. Microelectronics & Computer, 2017, 34(6): 14-17.

Research on A Single-Event-Hardened Charge Pump

  • A radiation-hardened charge pump has been proposed in which a novel numerical control restrain (NCR) circuit is applied to reduce the current perturbation and the clock jitter caused by the single energetic particle strikes. A hardened charge pump is implemented in a self-biased PLL with 130 nm CMOS process to verify the circuit and the corresponding results show that the peak of current perturbation reduces by up to 60% and the frequency stability reduces to 8e-4 compared with the traditional CP at the same time of current perturbation.
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