Research of CMOS D-Latch Hardened Circuit Based on RHBD Technology

This paper introduces the design technology of CMOS D-Latch Radiation-Hardened Circuit based on the RHBD (Radiation-Hard-By-Design) technology, and Single Event Effects simulation was conducted. Firstly, The paper introduces the technologies of Dual interlocked storage cell (DICE) based on RHBD; then gives out the D-Latch design based on the structure of DICE, along with its wave-form of function with extracting parasitic parameters from its layout, and Single Event Effects simulation. It proves that the DICE latch has the ability of single-event-effects-Hard, and the LET threshold was worked out.