LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.
Citation:
LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.
LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.
Citation:
LI Dong, LIU Wen-ping, ZHANG Bing, LI Xin, HE Jie. Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor[J]. Microelectronics & Computer, 2014, 31(3): 138-141.
Analysis of Noise Floor for 4T Pixel in CMOS Image Sensor
To suppress the noise floor and enhance the dynamic range,firstly,the structure of 4T pixel is shown,which of the basic noise is analyzed.Then the influence to signal and emergence of the kinds of noise floor are discussed,and the kinds of noise is quantitatively analyzed in the form of noise electrons.Finally the measures to suppress noise are put forward,which are verified by the simulation.
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