A Fast-Transient-Response LDO for Flash Memory

A low-dropout regulator (LDO) without off-chip capacitor for flash memory application is presented in this paper.Techniques of Miller compensation and adaptive biasing are employed to achieve high stability and enhanced loop bandwidth while maintaining low quiescent current and high current efficiency.Simultaneously,inner small capacitor is used to enhance load regulation through its coupling effect to implement high-speed feedback loop. The proposed LDO is implemented in 90nm process,and can regulates the output voltage at 1.3 V from supply ranging from 1.45~3.8 V,providing maximum output current of 10 mA.The settling time of the proposed LDO is only 20 ns when output current changes from low to high for flash memory.The active chip area is 40μm*280μm.